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| inchange semiconductor product specification silicon pnp power transistors 2SB507 description ? ?with to-220c package ? complement to type 2sd313 ? low collector saturation voltage applications ? designed for the output stage of 15w to 25w af power amplifier pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -60 v v ceo collector-emitter voltage open base -60 v v ebo emitter-base voltage open collector -5 v i c collector current (dc) -3 a i cm collector current-peak -6 a i b base current -1 a p c collector dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -50~150 ?? thermal characteristics symbol characteristics max unit r | jc thermal resistance junction to case 4.16 ??/w fig.1 simplified outline (to-220) and symbol
inchange semiconductor product specification 2 silicon pnp power transistors 2SB507 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo collector-emitter voltage i c =-10ma; i b =0 -60 v v cesat collector-emitter saturation voltage i c =-2a; i b =-0.2a -1.0 v v be base-emitter on voltage i c =-1a ; v ce =-2v -1.5 v i cbo collector cut-off current v cb =-60v; i e =0 -0.1 ma i ceo collector cut-off current v ce =-60v; i b =0 -5.0 ma i ebo emitter cut-off current v eb =-4v; i c =0 -1.0 ma h fe-1 dc current gain i c =-1a ; v ce =-2v 40 320 h fe-2 dc current gain i c =-0.1a ; v ce =-2v 40 f t transition frequency i c =-0.5a ; v ce =-5v 5 mhz ? h fe-1 classifications c d e f 40-80 60-120 100-200 160-320 inchange semiconductor product specification 3 silicon pnp power transistors 2SB507 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10mm) |
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